Features
• Devices QML Qualified in Accordance with MIL-PRF38535
• Detailed Electrical and Screening Requirements are
Contained in SMD# 5962-96703 and Intersil’s QM Plan
• 1.25 Micron Radiation Hardened SOS CMOS
• Total Dose >300K RAD (Si)
• Single Event Upset (SEU) Immunity: <1 x 10-10
Errors/Bit/Day (Typ)
• SEU LET Threshold>100 MEV-cm2/mg
• Dose Rate Upset>1011 RAD (Si)/s, 20ns Pulse
• Dose Rate Survivability>1012 RAD (Si)/s, 20ns Pulse
• Latch-Up Free Under Any Conditions
• Military Temperature Range-55oC to +125oC
• Significant Power Reduction Compared to ALSTTL
Logic
• DC Operating Voltage Range 4.5V to 5.5V
• Input Logic Levels
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
• Input Current  1A at VOL, VOH
• Fast Propagation Delay15ns (Max), 10ns (Typ)

Description
The Intersil ACS03MS is a Radiation Hardened quad 2-input
NAND gate with open drain outputs. The open drain output
can drive resistive loads from a separate supply voltage.
The ACS03MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of a
radiation hardened, high-speed, CMOS/SOS Logic Family.
The ACS03MS is supplied in a 14 lead Ceramic Flatpack (K
suffix) or a Ceramic Dual-In-Line Package (D suffix).