Features
• Voltage Range: 1.65 V - 3.6 V
• 32-Mbit Flash Memory
• Serial Peripheral Interface (SPI) compatible
• Supports SPI modes 0 and 3
• Supports single input/output operations(1-1-1)
• Supports dual output operations (1-1-2)
• Supports quad output operations (1-1-4)
• Supports quad I/O operations (1-4-4)
• Supports XiP operations (1-4-4, 0-4-4)
• 133 MHz maximum operating frequency
• Clock-to-output of 8 ns
• Flexible, optimized erase architecture for code and data storage applications
• Uniform 4-kByte block erase
• Uniform 32-kByte block erase
• Uniform 64-kByte block erase
• Full chip erase
• Flexible non-volatile block protection
• 1 x 128-byte factory-programmed unique identifier
• 3 x 128-byte, One Time Programmable (OTP) security registers
• Flexible programming
• Byte/Page program (1 to 256 Bytes)
• Sequential program mode capability
• Erase program suspend resume
• Software controlled Reset and Terminate commands
• Hardware reset option (through HOLD pin)
• JEDEC hardware reset
• Non-volatile status register configuration option
• JEDEC standard manufacturer and device ID read methodology
• Serial Flash Discoverable Parameters (SFDP) version 1.6
• Low power dissipation:
• 26 µA standby current (typical)
• 7 µA Deep Power-Down (DPD) current (typical)
• 5 - 7 nA Ultra-Deep Power-Down (UDPD) current (typical)
• 8.3 mA active read current (1-1-1 — 104 MHz)
• 9.2 mA program current
• 10.2 mA erase current
• User-configurable and auto I/O pin drive levels
• Endurance: 100,000 program/erase cycles
• Data Retention: 20 years
• Temperature Range: -40 oC to +85 oC
• Industry standard green (Pb/Halide-free/RoHS Compliant) Package Options
• 8-lead SOIC (150-mil)
• 8-lead SOIC (208-mil)
• 8-pad Ultra-thin DFN (5 x 6 x 0.6 mm)
• 8-pad Ultra-thin Small Outline No-lead USON (3 x 4 x 0.55 mm)
• 12-ball WLCSP (3 x 2 x 3 ball matrix)
• Die in Wafer Form (DWF)