SCT012H90G3AG Scheda tecnica(PDF) - STMicroelectronics

Motore di ricerca datesheet componenti elettronici

ALLDATASHEETIT.COM

X

SCT012H90G3AG Scheda tecnica (PDF) - STMicroelectronics

SCT012H90G3AG Datasheet PDF - STMicroelectronics


Il numero della parte	SCT012H90G3AG

Scarica	SCT012H90G3AG Scarica

Grandezza file	390.44 Kbytes

Page	14 Pages

Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

Homepage	http://www.st.com

Logo

Spiegazioni elettronici

Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an H²PAK-7 package

SCT012H90G3AG Datasheet (PDF)

Go To PDF Page

Scarica Scheda tecnica

SCT012H90G3AG Datasheet PDF - STMicroelectronics


Il numero della parte	SCT012H90G3AG

Scarica	SCT012H90G3AG Click to download

Grandezza file	390.44 Kbytes

Page	14 Pages

Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

Homepage	http://www.st.com

Logo

Spiegazioni elettronici	Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an H²PAK-7 package

SCT012H90G3AG Scheda tecnica (HTML) - STMicroelectronics

SCT012H90G3AG Datasheet HTML 1Page - STMicroelectronics

SCT012H90G3AG Datasheet HTML 2Page - STMicroelectronics

SCT012H90G3AG Datasheet HTML 3Page - STMicroelectronics

SCT012H90G3AG Datasheet HTML 4Page - STMicroelectronics

SCT012H90G3AG Datasheet HTML 5Page - STMicroelectronics

SCT012H90G3AG Datasheet HTML 6Page - STMicroelectronics

SCT012H90G3AG Datasheet HTML 7Page - STMicroelectronics

SCT012H90G3AG Datasheet HTML 8Page - STMicroelectronics

SCT012H90G3AG Datasheet HTML 9Page - STMicroelectronics

SCT012H90G3AG Datasheet HTML 10Page - STMicroelectronics

SCT012H90G3AG Dettagli del prodotto

Features
• AEC-Q101 qualified
• Very low RDS(on) over the entire temperature range
• High speed switching performances
• Very fast and robust intrinsic body diode
• Source sensing pin for increased efficiency

Applications
• Main inverter (electric traction)
• DC/DC converter for EV/HEV
• On board charger (OBC)

Description
This silicon carbide Power MOSFET device has been developed using ST’s
advanced and innovative 3rd generation SiC MOSFET technology. The device
features a very low RDS(on) over the entire temperature range combined with
low capacitances and very high switching operations, which improve application
performance in frequency, energy efficiency, system size and weight reduction.

Codice articolo simile - SCT012H90G3AG

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Beijing Yaohuadechang E...	SCT010	1Mb / 1P	Split core current transformer
	SCT010T	6Mb / 1P	0.333V Split core current transformer
	SCT010T-D	6Mb / 1P	T-D series DC output split core current transformer
STMicroelectronics	SCT011H75G3AG	395Kb / 14P	Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an H²PAK-7 package 08-Mar-2022
STMicroelectronics	SCT011HU75G3AG	954Kb / 15P	Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package 12-Jul-2024

Descrizione simile - SCT012H90G3AG

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
STMicroelectronics	SCTH35N65G2V-7AG	620Kb / 15P	Automotive-grade silicon carbide Power MOSFET, 650 V, 45 A,55 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package 24-Jan-2020
	SCT011H75G3AG	395Kb / 14P	Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an H²PAK-7 package 08-Mar-2022
	SCT018H65G3AG	390Kb / 14P	Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an H²PAK-7 package 07-Oct-2022
	SCT020H120G3AG	362Kb / 14P	Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an H²PAK-7 package 27-Sep-2022
	SCT025H120G3AG	369Kb / 14P	Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 55 A in an H²PAK-7 package 28-Nov-2022
	SCT040H120G3AG	386Kb / 14P	Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an H²PAK-7 package 14-Oct-2022
	SCT040H65G3AG	389Kb / 14P	Automotive-grade silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an H²PAK-7 package 21-Jan-2022
	SCT070H120G3AG	396Kb / 14P	Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an H²PAK-7 package 04-Apr-2023
	SCT10N120AG	238Kb / 14P	Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package 21-Sep-2022
	SCTH60N120G2-7AG	356Kb / 14P	Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 55 A in an H²PAK-7 package 02-Aug-2021

A proposito di STMicroelectronics

STMicroelectronics è un produttore di elettronica e semiconduttori multinazionali con sede a Ginevra, in Svizzera.

La società offre una vasta gamma di prodotti tra cui microcontrollori, sensori, amplificatori di potenza e circuiti integrati per varie applicazioni nei mercati automobilistici, industriali e di consumo.

Fondata nel 1987, STMicroelectronics ha operazioni in oltre 100 paesi ed è una delle più grandi società di semiconduttori al mondo.

*Queste informazioni sono solo a scopo informativo generale, non saremo responsabili per eventuali perdite o danni causati dalle informazioni di cui sopra.

Link URL

Lei ha avuto il aiuto da alldatasheet? [ DONATE ]

Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | Collegamento alla scheda tecnica | scambio Link | Ricerca produttore
All Rights Reserved©Alldatasheet.com

Mirror Sites English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz

Family Site : ic2ic.com | icmetro.com