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PBSS4130PAN Scheda tecnica (PDF) - Nexperia B.V. All rights reserved
PBSS4130PAN Datasheet PDF - Nexperia B.V. All rights reserved
Il numero della parte PBSS4130PAN
Scarica  PBSS4130PAN Scarica
Grandezza file   752.0 Kbytes
Page   17 Pages
Produttore elettronici  NEXPERIA [Nexperia B.V. All rights reserved]
Homepage  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved
Spiegazioni elettronici 30 V, 1 A NPN/NPN low VCEsat (BISS) transistor

PBSS4130PAN Datasheet (PDF)

Go To PDF Page Scarica Scheda tecnica
PBSS4130PAN Datasheet PDF - Nexperia B.V. All rights reserved

Il numero della parte PBSS4130PAN
Scarica  PBSS4130PAN Click to download

Grandezza file   752.0 Kbytes
Page   17 Pages
Produttore elettronici  NEXPERIA [Nexperia B.V. All rights reserved]
Homepage  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved
Spiegazioni elettronici 30 V, 1 A NPN/NPN low VCEsat (BISS) transistor

PBSS4130PAN Scheda tecnica (HTML) - Nexperia B.V. All rights reserved


PBSS4130PAN Dettagli del prodotto

1. General description
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless
medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/PNP complement: PBSS4130PANP. PNP/PNP complement: PBSS5130PAP.

2. Features and benefits
• Very low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High collector current gain hFE at high IC
• Reduced Printed-Circuit Board (PCB) requirements
• High energy efficiency due to less heat generation
• AEC-Q101 qualified

3. Applications
• Load switch
• Battery-driven devices
• Power management
• Charging circuits
• Power switches (e.g. motors, fans)




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