Features
• Electrically screened to DLA SMD# 5962-13214
• Acceptance tested to 50krad(Si) (LDR) wafer-by-wafer
• <5μs recovery from SEE (LETTH = 86.4MeV•cm2/mg)
• Unity gain stable
• Rail-to-rail input and output
• Wide gain·bandwidth product . . . . . . . . . . . . . . . . . . . . 19MHz
• Wide single and dual supply range. . . . . . . . 2.7V to 40V max
• Low input offset voltage . . . . . . . . . . . . . . . . . . . . . . . . . 400μV
• Low current consumption (per amplifier) . . . . . . . 1.1mA, typ
• No phase reversal with input overdrive
• Slew rate
- Large signal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V/μs
• Operating temperature range. . . . . . . . . . . .-55°C to +125°C
• ISL70444SEH radiation acceptance (see TID report)
- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 300krad(Si)
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . . .50krad(Si)
• ISL73444SEH radiation acceptance (see TID report)
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . . .50krad(Si)
• SEE hardness (see SEE report for details)
- SEB LETTH (VS = ±21V). . . . . . . . . . . . . . 86.4MeV•cm2/mg
- SEL immune (SOI Process)