CEU3109 Scheda tecnica(PDF) - CET-MOS Technology Corp.

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CEU3109 Scheda tecnica (PDF) - CET-MOS Technology Corp.

CEU3109 Datasheet PDF - CET-MOS Technology Corp.


Il numero della parte	CEU3109

Scarica	CEU3109 Scarica

Grandezza file	841.4 Kbytes

Page	7 Pages

Produttore elettronici	CET-MOS [CET-MOS Technology Corp.]

Homepage	https://www.cet-mos.com/en/index.asp

Logo

Spiegazioni elettronici

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

CEU3109 Datasheet (PDF)

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Scarica Scheda tecnica

CEU3109 Datasheet PDF - CET-MOS Technology Corp.


Il numero della parte	CEU3109

Scarica	CEU3109 Click to download

Grandezza file	841.4 Kbytes

Page	7 Pages

Produttore elettronici	CET-MOS [CET-MOS Technology Corp.]

Homepage	https://www.cet-mos.com/en/index.asp

Logo

Spiegazioni elettronici	Dual Enhancement Mode Field Effect Transistor (N and P Channel)

CEU3109 Scheda tecnica (HTML) - CET-MOS Technology Corp.

CEU3109 Datasheet HTML 1Page - CET-MOS Technology Corp.

CEU3109 Datasheet HTML 2Page - CET-MOS Technology Corp.

CEU3109 Datasheet HTML 3Page - CET-MOS Technology Corp.

CEU3109 Datasheet HTML 4Page - CET-MOS Technology Corp.

CEU3109 Datasheet HTML 5Page - CET-MOS Technology Corp.

CEU3109 Datasheet HTML 6Page - CET-MOS Technology Corp.

CEU3109 Datasheet HTML 7Page - CET-MOS Technology Corp.

CEU3109 Dettagli del prodotto

FEATURES
30V , 22A , RDS(ON) = 12mW @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
TO-252-4L package.
RDS(ON) = 20mW @VGS = 4.5V.
Lead-free plating ; RoHS compliant.
-30V , -18A , RDS(ON) = 20mW @VGS = 10V.
RDS(ON) = 30mW @VGS = 4.5V.

Codice articolo simile - CEU3109

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Chino-Excel Technology	CEU3100	415Kb / 4P	N-Channel Enhancement Mode Field Effect Transistor
SHENZHEN DOINGTER SEMIC...	CEU3100	1Mb / 4P	N-Channel MOSFET uses advanced trench technology
CET-MOS Technology Corp...	CEU3100	661Kb / 4P	N-Channel Enhancement Mode Field Effect Transistor Rev 2. 2012.Mar

Descrizione simile - CEU3109

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Fairchild Semiconductor	SI4532DY	327Kb / 4P	Dual N- and P-Channel Enhancement Mode Field Effect Transistor
Chino-Excel Technology	CEM2030A	847Kb / 9P	Dual Enhancement Mode Field Effect Transistor(N and P Channel)
	CEM11C2	59Kb / 9P	Dual Enhancement Mode Field Effect Transistor (N and P Channel)
	CEM9952A	1Mb / 10P	Dual Enhancement Mode Field Effect Transistor(N and P Channel)
SamHop Microelectronics...	STA6611	180Kb / 10P	Dual Enhancement Mode Field Effect Transistor ( N and P Channel)
SamHop Microelectronics...	STU313D	247Kb / 11P	Dual Enhancement Mode Field Effect Transistor (N and P Channel)
Chino-Excel Technology	CEM7350	547Kb / 7P	Dual Enhancement Mode Field Effect Transistor (N and P Channel)
Chino-Excel Technology	CEU4269	590Kb / 7P	Dual Enhancement Mode Field Effect Transistor (N and P Channel)
CET-MOS Technology Corp...	CEM23189	866Kb / 7P	Dual Enhancement Mode Field Effect Transistor (N and P Channel) Rev 2. 2014.July
CET-MOS Technology Corp...	CEM6589	894Kb / 7P	Dual Enhancement Mode Field Effect Transistor (N and P Channel) Rev 2. 2017.July

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