RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs

Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications.

• Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ =
   1400 mA, Pout = 50 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
   64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
   PAR = 7.5 dB @ 0.01% Probability on CCDF.
      Power Gain — 16 dB
      Drain Efficiency — 31%
      Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF
      ACPR @ 5 MHz Offset — -37 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 170 Watts CW Output Power
• Pout @ 1 dB Compression Point  170 Watts CW

Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate-Source Voltage Range for Improved Class C Operation
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.