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IS42S16100 Scheda tecnica (PDF) - Integrated Silicon Solution, Inc

IS42S16100 Datasheet PDF - Integrated Silicon Solution, Inc
Il numero della parte IS42S16100
Scarica  IS42S16100 Scarica
Grandezza file   739.78 Kbytes
Page   78 Pages
Produttore elettronici  ISSI [Integrated Silicon Solution, Inc]
Homepage  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc
Spiegazioni elettronici 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

IS42S16100 Datasheet (PDF)

Go To PDF Page Scarica Scheda tecnica
IS42S16100 Datasheet PDF - Integrated Silicon Solution, Inc

Il numero della parte IS42S16100
Scarica  IS42S16100 Click to download

Grandezza file   739.78 Kbytes
Page   78 Pages
Produttore elettronici  ISSI [Integrated Silicon Solution, Inc]
Homepage  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc
Spiegazioni elettronici 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

IS42S16100 Scheda tecnica (HTML) - Integrated Silicon Solution, Inc


IS42S16100 Dettagli del prodotto

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.

FEATURES
• Clock frequency: 166, 143, 100 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Two banks can be operated simultaneously and independently
• Dual internal bank controlled by A11 (bank select)
• Single 3.3V power supply
• LVTTL interface
• Programmable burst length – (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Auto refresh, self refresh
• 4096 refresh cycles every 128 ms
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Burst termination by burst stop and precharge command
• Byte controlled by LDQM and UDQM
• Package 400-mil 50-pin TSOP II




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A proposito di Integrated Silicon Solution, Inc


Integrated Silicon Solution, Inc. (ISSI) is a fabless semiconductor company that designs and markets high-performance integrated circuits (ICs) for the automotive, industrial, medical, and communications markets. The company was founded in 1988 and is headquartered in Milpitas, California, USA.

ISSI's product portfolio includes static random access memory (SRAM), dynamic random access memory (DRAM), and analog and mixed-signal ICs. The company specializes in low-power, high-speed SRAMs, and is a leading supplier of DRAMs to the automotive market.

In 2015, ISSI was acquired by China's Uphill Investment Co., Ltd. and became a wholly-owned subsidiary of Uphill Investment.

*Queste informazioni sono solo a scopo informativo generale, non saremo responsabili per eventuali perdite o danni causati dalle informazioni di cui sopra.




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