| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
VIGO Photonics S.A. |
PVI4TE6TO8-36-DTE
|
722Kb / 2P |
3.0 – 6.9 μm HgCdTe four-stage thermoelectrically cooled, optically immersed photovoltaic detector
25/09/2020 |
|
LABM-I-4
|
760Kb / 2P |
2.4 – 4.3 μm and over 5 MHz HgCdTe programmable, laboratory IR detection module with optically immersed photovoltaic detector
01/10/2021 |
|
LABM-I-5
|
762Kb / 2P |
2.9 – 5.5 μm and over 15 MHz HgCdTe programmable, laboratory IR detection module with optically immersed photovoltaic detector
01/10/2021 |
|
NIPM-I-5
|
901Kb / 2P |
2.9 – 5.5 μm and over 1.8 MHz balanced / auto-balanced IR detection module with two HgCdTe thermoelectrically cooled, optically immersed photovoltaic detectors
21/12/2021 |
|
QM-10.6
|
880Kb / 2P |
3.0 – 12.0 μm and DC – 1 MHz HgCdTe four-channel IR detection module with photovoltaic quadrant geometry multiple junction detector
16/08/2021 |
|
UHSM-10.6
|
800Kb / 2P |
3.0 – 12.0 μm and over 1GHz HgCdTe ultra high speed IR detection module with photovoltaic detector
09/11/2020 |
|
UHSM-I-10.6
|
825Kb / 2P |
3.0 – 12.0 μm and over 700 MHz HgCdTe ultra high speed IR detection module with optically immersed photovoltaic detector
09/11/2020 |
|
UM-10.6
|
803Kb / 2P |
2.0 – 12.0 μm and DC – 70 MHz HgCdTe universal IR detection module with photovoltaic multiple junction detector
09/11/2020 |
|
UM-I-10.6
|
823Kb / 2P |
2.0 – 12.0 μm and DC – 100 MHz HgCdTe universal IR detection module with optically immersed photovoltaic multiple junction detector
09/11/2020 |
|
UM-I-6
|
825Kb / 2P |
3.0 – 6.7 μm and DC – 1 MHz HgCdTe universal IR detection module with optically immersed photovoltaic detector
14/09/2020 |
Italian ▼ 
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
