Description
CGHV35060MP is a 60 W input matched, gallium nitride (GaN) high electron mobility
transistor (HEMT) optimized for S-Band performance. The CGHV35060MP is suitable for
typical bands of 2.7-3.1 GHz and 3.1-3.5 GHz while the input matched transistor provides
optimal gain, power and efficiency in a small 6.5mm x 4.4mm plastic surface mount (SMT)
package. The typical performance plots in the datasheet are derived with CGHV35060MP
matched into a 3.1-3.5 GHz high power amplifier.
Features
• Reference design amplifier 3.1 - 3.5 GHz
• 75W Typical output power
• 14.5 dB power gain
• 67% Drain efficiency
• Internally pre-matched on input, unmatched output