Description
Wolfspeed’s CMPA0060025D is a gallium nitride (GaN) High Electron
Mobility Transistor (HEMT) based monolithic microwave integrated
circuit (MMIC). GaN has superior properties compared to silicon or
gallium arsenide, including higher breakdown voltage, higher saturated
electron drift velocity and higher thermal conductivity. GaN HEMTs also
offer greater power density and wider bandwidths compared to Si and
GaAs transistors. This MMIC enables very wide bandwidths.
Features
• 18 dB Small Signal Gain
• 30 W Typical PSAT
• Operation up to 50 V
• High Breakdown Voltage
• High Temperature Operation
• Size 0.157 x 0.094 x 0.004 inches
Applications
• Ultra Broadband Amplifiers
• Test Instrumentation
• EMC Amplifier Drivers