GTRA263902FC-V2-R2 Scheda tecnica(PDF) - WOLFSPEED, INC.

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GTRA263902FC-V2-R2 Scheda tecnica (PDF) - WOLFSPEED, INC.

GTRA263902FC-V2-R2 Datasheet PDF - WOLFSPEED, INC.


Il numero della parte	GTRA263902FC-V2-R2

Scarica	GTRA263902FC-V2-R2 Scarica

Grandezza file	531.41 Kbytes

Page	8 Pages

Produttore elettronici	WOLFSPEED [WOLFSPEED, INC.]

Homepage	https://www.wolfspeed.com/

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Spiegazioni elettronici

Thermally-Enhanced High Power RF GaN on SiC HEMT 370 W, 48 V, 2495 – 2690 MHz

GTRA263902FC-V2-R2 Datasheet (PDF)

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GTRA263902FC-V2-R2 Datasheet PDF - WOLFSPEED, INC.


Il numero della parte	GTRA263902FC-V2-R2

Scarica	GTRA263902FC-V2-R2 Click to download

Grandezza file	531.41 Kbytes

Page	8 Pages

Produttore elettronici	WOLFSPEED [WOLFSPEED, INC.]

Homepage	https://www.wolfspeed.com/

Logo

Spiegazioni elettronici	Thermally-Enhanced High Power RF GaN on SiC HEMT 370 W, 48 V, 2495 – 2690 MHz

GTRA263902FC-V2-R2 Scheda tecnica (HTML) - WOLFSPEED, INC.

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GTRA263902FC-V2-R2 Datasheet HTML 8Page - WOLFSPEED, INC.

GTRA263902FC-V2-R2 Dettagli del prodotto

Description
The GTRA263902FC is a 370-watt (P3dB) GaN on SiC high
electron mobility transistor (HEMT) for use in multistandard cellular power amplifier applications. It features
input matching, high efficiency, and a thermally-enhanced
package with earless flange.
Features
• GaN on SiC HEMT technology
• Input matched
• Typical Pulsed CW performance, 2690 MHz, 48 V,
combined outputs
- Output power at P3dB = 370 W
- Efficiency = 70%
- Gain = 15 dB
• Capable of handling 10:1 VSWR @48 V, 56 W (CW)
output power
• Human Body Model class 1A (per ANSI/ESDA/
JEDEC JS-001)
• Low thermal resistance
• Pb-free and RoHS compliant

Codice articolo simile - GTRA263902FC-V2-R2

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Cree, Inc	GTRA263902FC	486Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 370 W, 48 V, 2495 ??2690 MHz

Descrizione simile - GTRA263902FC-V2-R2

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Cree, Inc	GTVA263202FC	458Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 ??2690 MHz
	GTRA263902FC	486Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 370 W, 48 V, 2495 ??2690 MHz
	GTVA261802FC	495Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 ??2690 MHz
	GTVA262701FA	489Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 ??2690 MHz
	GTVA262711FA	464Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 ??2690 MHz
WOLFSPEED, INC.	GTVA262701FA_V2	506Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz Rev. 04.3, 2022-1-27
	GTRA262802FC	515Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 – 2690 MHz Rev. 03.3, 2022-1-27
	GTVA261802FC	536Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 – 2690 MHz Rev. 02.1, 2022-1-27
	GTVA262701FA	506Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz Rev. 04.3, 2022-1-27
	GTVA263202FC	632Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 – 2690 MHz Rev. 04.1, 2022-1-27

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