Description
The WS1A2639 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC technology with RF matching
and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The WS1A2639 has been designed to
operate from 2496 MHz to 2690 MHz supply voltages of up to 50 V at average output power levels of 6 to 8 W with crest-factor reduced
and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of up to 200 MHz. The device is housed in a 6 mm X 6
mm land grid array (LGA) package.
Features
• GaN on SiC technology
• Frequency: 2496-2690 MHz
• Average Output Power : 6 to 8 W maximum
• PSAT = 48 dBm
• RF inputs matched to 50 Ω and DC matched
• Gate bias supply for main and peak sides available from either side
of device
• Integrated harmonic terminations
• Pb-free and RoHS compliant