1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
1.2 Features
1.3 Applications
1.4 Quick reference data
n Logic level compatible n Very fast switching
n Subminiature surface mount package n Gate-source ESD protection diodes.
n Relay driver n High speed line driver.
n VDS £ 60 V n ID £ 340 mA
n Ptot £ 0.83 W n RDSon £ 3.9 W.