FEATURES
► Single positive supply (self biased)
► Gain: 27 dB typical at 9 GHz to 19 GHz
► OP1dB: 13.5 dB typical at 1 GHz to 9 GHz
► OIP3: 25 dBm typical at 1 GHz to 9 GHz
► Noise figure: 2.5 dB typical at 9 GHz to 19 GHz
► RoHS-compliant, 3 mm × 3 mm, 16-lead LFCSP

APPLICATIONS
► Telecommunications
► Satellite communications
► Military radar
► Weather radar
► Civil radar
► Electronic warfare

GENERAL DESCRIPTION
The ADL8102 is a gallium arsenide (GaAs), monolithic microwave
integrated circuit (MMIC), pseudomorphic high electron mobility
transistor (pHEMT), low noise wideband amplifier that operates
from 1 GHz to 22 GHz.
The ADL8102 provides a typical gain of 27 dB at 9 GHz to 19 GHz,
a 2.5 dB typical noise figure from 9 GHz to 19 GHz, a typical output
third-order intercept (OIP3) of 25 dBm at 1 GHz to 9 GHz, and a
saturated output power (PSAT) of up to 15.5 dBm, which requires
only 110 mA from a 5 V supply voltage. The ADL8102 also features
inputs and outputs that are internally matched to 50 Ω. The RFIN
and RFOUT pins are internally AC-coupled, and the bias inductor is
also integrated, which makes it ideal for surface-mounted technology
(SMT)-based, high capacity microwave radio applications.
The ADL8102 is housed in an RoHS-compliant, 3 mm × 3 mm,
16-lead LFCSP package.