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PMDXB950UPE Scheda tecnica (PDF) - Nexperia B.V. All rights reserved
PMDXB950UPE Datasheet PDF - Nexperia B.V. All rights reserved
Il numero della parte PMDXB950UPE
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Grandezza file   732.4 Kbytes
Page   15 Pages
Produttore elettronici  NEXPERIA [Nexperia B.V. All rights reserved]
Homepage  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved
Spiegazioni elettronici 20 V, dual P-channel Trench MOSFET

PMDXB950UPE Datasheet (PDF)

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PMDXB950UPE Datasheet PDF - Nexperia B.V. All rights reserved

Il numero della parte PMDXB950UPE
Scarica  PMDXB950UPE Click to download

Grandezza file   732.4 Kbytes
Page   15 Pages
Produttore elettronici  NEXPERIA [Nexperia B.V. All rights reserved]
Homepage  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved
Spiegazioni elettronici 20 V, dual P-channel Trench MOSFET

PMDXB950UPE Scheda tecnica (HTML) - Nexperia B.V. All rights reserved


PMDXB950UPE Dettagli del prodotto

1. General description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
• Trench MOSFET technology
• Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
• Exposed drain pad for excellent thermal conduction
• ElectroStatic Discharge (ESD) protection > 1 kV HBM
• Drain-source on-state resistance RDSon = 1.02 Ω
3. Applications
• Relay driver
• High-speed line driver
• High-side load switch
• Switching circuits




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