Description
The 4N38M, H11D1M, H11D3M and MOC8204M are
phototransistor−type optically coupled optoisolators. A gallium
arsenide infrared emitting diode is coupled with a high voltage NPN
silicon phototransistor. The device is supplied in a standard plastic
six−pin dual−in−line package.

Features
• High Voltage:
♦ MOC8204M, BVCEO = 400 V
♦ H11D1M, BVCEO = 300 V
♦ H11D3M, BVCEO = 200 V
• Safety and Regulatory Approvals:
♦ UL1577, 4,170 VACRMS for 1 Minute
• DIN−EN/IEC60747−5−5, 850 V Peak Working Insulation Voltage

Applications
• Power Supply Regulators
• Digital Logic Inputs
• Microprocessor Inputs
• Appliance Sensor Systems
• Industrial Controls