1. General description
410 Amp continuous current, logic level gate drive N-channel enhancement mode MOSFET in
175 °C LFPAK88 package. Part of the ASFETs for Battery Isolation and DC Motor control family
and using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking
performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode
but without problematic high leakage current. The ASFET is particularly suited to 36 V battery
powered applications requiring strong avalanche capability, linear mode performance, use at high
switching frequencies, and also safe and reliable switching at high load-current.
2. Features and benefits
• 410 Amp continuous current capability
• LFPAK88 (8 x 8 mm) LFPAK-style low-stress exposed lead-frame for ultimate reliability,
optimum soldering and easy solder-joint inspection
• Copper-clip and solder die attach for low package inductance and resistance, and high ID(max)
rating
• Ideal replacement for D2PAK and 10 x 12 mm leadless package types
• Qualified to 175 °C
• Avalanche rated, 100 % tested
• Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies
• Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for
low EMI designs
• Unique “SchottkyPlus” technology for Schottky-like switching performance and low IDSS leakage
• Narrow VGS(th) rating for easy paralleling and improved current sharing
• Very strong linear-mode / safe operating area characteristics for safe and reliable switching at
high-current conditions
3. Applications
• Brushless DC motor control
• Synchronous rectifier in high-power AC-to-DC applications, e.g. server power supplies
• Battery protection
• eFuse and load switch
• Hotswap / in-rush current management
• 10 cell lithium-ion battery applications (36 V ‒ 42 V)