DESCRIPTION
The MPQ1923-AEC1 is a high-frequency, Nchannel
MOSFET, half-bridge gate driver. The
device’s low-side MOSFET (LS-FET) and highside
MOSFET (HS-FET) driver channels are
controlled independently, and are matched with
<5ns in time delay.
In the case of an insufficient supply, the device’s
HS-FET and LS-FET under-voltage lockout
(UVLO) protection forces the outputs low. The
MPQ1923-AEC1 also features an integrated
bootstrap (BST) diode to reduce the external
component count.
The MPQ1923-AEC1 is available in QFN-10
(4mmx4mm) and QFN-8 (4mmx4mm)
packages.

FEATURES
• Drives an N-Channel MOSFET Half-Bridge
• Low Dropout with 4.5V Under-Voltage
Lockout (UVLO) Falling Threshold
• 120V Bootstrap Voltage (VBST) Range
• On-Chip Bootstrap Diode
• 20ns Typical Propagation Delay
• 8A Sink Current, 7A Source Current at 12V
VDD
• <5ns Gate Driver Matching Time Delay
• Drives a 1nF Load with 7.2ns Rise Time
(tRISE) and 5.5ns Fall Time (tFALL) at 12V VDD
• TTL-Compatible Input
• <300μA Quiescent Current (IQ)
• UVLO Protection for the HS-FET and
LS-FET Gate Drivers
• Available in QFN-10 (4mmx4mm) and
QFN-8 (4mmx4mm) Packages
• Available in AEC-Q100 Grade 1

APPLICATIONS
• Motor Drivers
• Telecom Half-Bridge Power Supplies
• Avionics DC/DC Converters
• Two-Switch Forward Converters
• Active-Clamp Forward Converters