Description
The TP65H150G4PS 650V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.
Features
• Gen IV technology
• JEDEC-qualified GaN technology
• Dynamic RDS(on)eff production tested
• Robust design, defined by
— Wide gate safety margin
— Transient over-voltage capability
• Very low QRR
• Reduced crossover loss
• RoHS compliant and Halogen-free packaging
Applications
• Consumer
• Power adapters
• Low power SMPS
• Lighting