Introduction or Description
The FOD814 consists of two gallium arsenide infrared emitting
diodes, connected in inverse parallel, driving a silicon phototransistor
output in a 4−pin dual in−line package. The FOD817 Series consists of
a gallium arsenide infrared emitting diode driving a silicon
phototransistor in a 4−pin dual in−line package.
Features
• AC Input Response (FOD814)
• Current Transfer Ratio in Selected Groups
♦ FOD814: 20–300%
♦ FOD814A: 50–150%
♦ FOD817: 50–600%
♦ FOD817A: 80–160%
♦ FOD817B: 130–260%
♦ FOD817C: 200–400%
♦ FOD817D: 300–600%
• Minimum BVCEO of 70 V Guaranteed
• Safety and Regulatory Approvals
♦ UL1577, 5,000 VACRMS for 1 Minute
♦ DIN EN/IEC60747−5−5
• This Device is Pb−Free
Typical Applications
• FOD814 Series
♦ AC Line Monitor
♦ Unknown Polarity DC Sensor
♦ Telephone Line Interface
• FOD817 Series
♦ Power Supply Regulators
♦ Digital Logic Inputs
♦ Microprocessor Inputs