2N6304 Scheda tecnica(PDF) - Advanced Power Technology

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2N6304 Scheda tecnica (PDF) - Advanced Power Technology

2N6304 Datasheet PDF - Advanced Power Technology


Il numero della parte	2N6304

Scarica	2N6304 Scarica

Grandezza file	115.58 Kbytes

Page	4 Pages

Produttore elettronici	ADPOW [Advanced Power Technology]

Homepage	http://www.advpowertech.com

Logo

Spiegazioni elettronici

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

2N6304 Datasheet (PDF)

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Scarica Scheda tecnica

2N6304 Datasheet PDF - Advanced Power Technology


Il numero della parte	2N6304

Scarica	2N6304 Click to download

Grandezza file	115.58 Kbytes

Page	4 Pages

Produttore elettronici	ADPOW [Advanced Power Technology]

Homepage	http://www.advpowertech.com

Logo

Spiegazioni elettronici	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

2N6304 Scheda tecnica (HTML) - Advanced Power Technology

2N6304 Datasheet HTML 1Page - Advanced Power Technology

2N6304 Datasheet HTML 2Page - Advanced Power Technology

2N6304 Datasheet HTML 3Page - Advanced Power Technology

2N6304 Datasheet HTML 4Page - Advanced Power Technology

2N6304 Dettagli del prodotto

DESCRIPTION:
The 2N6304 is a silicon NPN transistor designed primarily for use in high gain, low noise general-purpose UHF amplifiers.

Features
• Silicon RF NPN, TO-72, UHF general purpose Low Noise Transistor
• Noise Figure = 5.0 dB (typ) @ f = 450 MHz
• High FT - 1.4 GHz (min) @ IC = 10 mAdc
• Maximum Available Gain = 14 dB (min) @ f = 500 MHz

Codice articolo simile - 2N6304

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Microsemi Corporation	2N6304	86Kb / 4P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
New Jersey Semi-Conduct...	2N6304	97Kb / 1P	BIPOLAR NPN UHF/MICROWAVE TRANSISTOR

Descrizione simile - 2N6304

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Microsemi Corporation	2N6304	86Kb / 4P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
	BFR91	170Kb / 5P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
	BFY90	84Kb / 4P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
	MRF559	208Kb / 5P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
	MRF5812	173Kb / 5P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
	MRF5943	174Kb / 5P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Advanced Power Technolo...	BFR90	120Kb / 5P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
	BFR91	120Kb / 5P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
	MRF581	282Kb / 6P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
	MRF544	302Kb / 4P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

A proposito di Advanced Power Technology

Advanced Power Technology (APT) is a semiconductor company that designs, manufactures and sells power MOSFETs and IGBTs (Insulated Gate Bipolar Transistors). The company was founded in 1986 and is headquartered in Bend, Oregon, USA.

APT's products are used in a wide range of applications, including automotive, industrial, communications, and consumer electronics. The company offers a wide range of MOSFETs and IGBTs with different voltage and current ratings, package options and other features to meet the specific needs of its customers.

APT is known for its commitment to quality and innovation. The company's products are designed to meet the highest standards of performance and reliability, and are manufactured using the latest technology and materials. APT also offers custom design and engineering services to meet the specific needs of its customers.

APT has a global presence, with sales offices and representatives located around the world. The company is dedicated to delivering innovative and reliable power MOSFETs and IGBTs that meet the evolving needs of the electronics industry. In 2000, APT was acquired by Microsemi Corporation, which later became part of Microchip Technology Inc.

*Queste informazioni sono solo a scopo informativo generale, non saremo responsabili per eventuali perdite o danni causati dalle informazioni di cui sopra.

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