Description
The K827P and K847P consist of a phototransistor
optically coupled to a gallium arsenide infrared-emitting
diode in an 8-lead, resp. 16-lead plastic dual inline
package.
The elements are mounted on one leadframe using a
coplanar technique, providing a fixed distance between
input and output for highest safety requirements.

Applications
Galvanically separated circuits, non-interacting switches

Features

K827P includes 2 isolator channels

K847P includes 4 isolator channels

DC isolation test voltage VIO = 2.5 kV

Low coupling capacitance of typical 0.3 pF

Current Transfer Ratio (CTR) of typical 100%

Low temperature coefficient of CTR

Wide ambient temperature range

Underwriters Laboratory (UL) 1577
recognized, file No. E-76222