Description
The NCE2013J uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages .This device is suitable for use as a load switching
application and a wide variety of other applications.

General Features
● VDS = 20V,ID = 13A
RDS(ON) = 8.8mΩ @ VGS=4.5V (Typ)
RDS(ON) = 11.5mΩ @ VGS=2.5V (Typ)
● Advanced trench MOSFET process technology
● Ultra low on-resistance with low gate charge

Application
● PWM applications
● Load switch
● Battery charge in cellular handset