STGB30H65DFB2 Scheda tecnica(PDF) - STMicroelectronics

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STGB30H65DFB2 Scheda tecnica (PDF) - STMicroelectronics

STGB30H65DFB2 Datasheet PDF - STMicroelectronics


Il numero della parte	STGB30H65DFB2

Scarica	STGB30H65DFB2 Scarica

Grandezza file	650.02 Kbytes

Page	17 Pages

Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

Homepage	http://www.st.com

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Spiegazioni elettronici

Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a D²PAK package

STGB30H65DFB2 Datasheet (PDF)

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STGB30H65DFB2 Datasheet PDF - STMicroelectronics


Il numero della parte	STGB30H65DFB2

Scarica	STGB30H65DFB2 Click to download

Grandezza file	650.02 Kbytes

Page	17 Pages

Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

Homepage	http://www.st.com

Logo

Spiegazioni elettronici	Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a D²PAK package

STGB30H65DFB2 Scheda tecnica (HTML) - STMicroelectronics

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STGB30H65DFB2 Dettagli del prodotto

Features
• Maximum junction temperature : TJ = 175 °C
• Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A
• Very fast and soft recovery co-packaged diode
• Minimized tail current
• Tight parameter distribution
• Low thermal resistance
• Positive VCE(sat) temperature coefficient

Applications
• Welding
• Power factor correction
• UPS
• Solar inverters
• Chargers

Description
The newest IGBT 650 V HB2 series represents an evolution of the advanced
proprietary trench gate field-stop structure. The performance of the HB2 series is
optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current
values, as well as in terms of reduced switching energy. A very fast soft recovery
diode is co-packaged in antiparallel with the IGBT. The result is a product specifically
designed to maximize efficiency for a wide range of fast applications.

Codice articolo simile - STGB30H65DFB2

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
STMicroelectronics	STGB30H60DF	1Mb / 24P	600 V, 30 A high speed trench gate field-stop IGBT 20-Mar-2013
STMicroelectronics	STGB30H60DFB	1Mb / 21P	Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
Inchange Semiconductor ...	STGB30H60DFB	334Kb / 4P	Trench gate Field-Stop IGBT 2023-10-09
STMicroelectronics	STGB30H60DLFB	1Mb / 20P	Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
STMicroelectronics	STGB30H60DLLFBAG	1,009Kb / 17P	Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed 18-Oct-2016

Descrizione simile - STGB30H65DFB2

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
STMicroelectronics	STGFW30H65FB	1Mb / 20P	Trench gate field-stop IGBT, HB series 650 V, 30 A high speed 28-Jul-2015
ON Semiconductor	FGAF30S65AQ	302Kb / 9P	Field Stop Trench IGBT, 30 A, 650 V June, 2020 - Rev. 2
STMicroelectronics	STGB50H65FB2	450Kb / 16P	Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a D²PAK package 21-May-2020
	STGWA20HP65FB2	373Kb / 15P	Trench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a TO‑247 long leads package 11-May-2020
	STGWA30H65DFB2	513Kb / 15P	Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a TO-247 long leads package 13-Feb-2020
	STGWA40HP65FB2	516Kb / 16P	Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package 24-Jul-2019
	STGWA50HP65FB2	542Kb / 15P	Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO-247 long leads package 05-Dec-2019
	STGWA75H65DFB2	560Kb / 15P	Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO‑247 long leads package 13-Feb-2020
	STGB10M65DF2	1Mb / 19P	Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in D²PAK package 04-Apr-2017
	STGB15M65DF2	1Mb / 19P	Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a D²PAK package 04-May-2017

A proposito di STMicroelectronics

STMicroelectronics è un produttore di elettronica e semiconduttori multinazionali con sede a Ginevra, in Svizzera.

La società offre una vasta gamma di prodotti tra cui microcontrollori, sensori, amplificatori di potenza e circuiti integrati per varie applicazioni nei mercati automobilistici, industriali e di consumo.

Fondata nel 1987, STMicroelectronics ha operazioni in oltre 100 paesi ed è una delle più grandi società di semiconduttori al mondo.

*Queste informazioni sono solo a scopo informativo generale, non saremo responsabili per eventuali perdite o danni causati dalle informazioni di cui sopra.

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