This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlap
contact. Ideally suited for use as rectifiers in low−voltage,
high−frequency inverters, free wheeling diodes, and polarity
protection diodes.
Features
 Low Reverse Current
 Low Stored Charge, Majority Carrier Conduction
 Low Power Loss/High Efficiency
 Highly Stable Oxide Passivated Junction
 Guard−ring for Stress Protection
 Low Forward Voltage
 175C Operating Junction Temperature
 High Surge Capacity
 Pb−Free Packages are Available*
Mechanical Characteristics:
 Case: Epoxy, Molded
 Weight: 1.1 Gram (Approximately)
 Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
 Lead Temperature for Soldering Purposes:
260C Max. for 10 Seconds
 Polarity: Cathode indicated by Polarity Band