Motore di ricerca datesheet componenti elettronici
  Italian  ▼
ALLDATASHEETIT.COM

X  

M1F80M12W2-1LA Scheda tecnica (PDF) - STMicroelectronics

M1F80M12W2-1LA Datasheet PDF - STMicroelectronics
Il numero della parte M1F80M12W2-1LA
Scarica  M1F80M12W2-1LA Scarica
Grandezza file   3556.56 Kbytes
Page   14 Pages
Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Spiegazioni elettronici Automotive‑grade ACEPACK DMT‑32 power module, fourpack topology, 1200 V, 78 mΩ typ. SiC Power MOSFET with NTC

M1F80M12W2-1LA Datasheet (PDF)

Go To PDF Page Scarica Scheda tecnica
M1F80M12W2-1LA Datasheet PDF - STMicroelectronics

Il numero della parte M1F80M12W2-1LA
Scarica  M1F80M12W2-1LA Click to download

Grandezza file   3556.56 Kbytes
Page   14 Pages
Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Spiegazioni elettronici Automotive‑grade ACEPACK DMT‑32 power module, fourpack topology, 1200 V, 78 mΩ typ. SiC Power MOSFET with NTC

M1F80M12W2-1LA Scheda tecnica (HTML) - STMicroelectronics


M1F80M12W2-1LA Dettagli del prodotto

Features
• AQG 324 qualified
• 1200 V blocking voltage
• 78 mΩ of typical RDS(on)
• Maximum operating junction temperature TJ = 175 °C
• DBC Cu-AlN-Cu based substrate to improve thermal performance
• Isolation voltage 3 kV
• Integrated NTC temperature sensor

Applications
• On board charger (OBC)

Description
This ACEPACK DMT-32 power module realizes a fourpack topology with integrated
NTC, tailored for DC/DC converter stage of the OBC in hybrid and electric vehicles.
The power module features four silicon carbide Power MOSFETs of 2nd generation
from STMicroelectronics. Thanks to the well-recognized chip technology, the
ACEPACK DMT-32 ensures the best compromise between energy losses and high
switching frequency operation mode. This module allows you to create complex
topologies with very high power densities as well as high efficiency requirements.
The AlN insulated substrate enables optimal thermal performance. Moreover, thanks
to the specific design featuring grooves on the molding ensure a high creepage
distance.




Codice articolo simile - M1F80M12W2-1LA

Produttore elettroniciIl numero della parteScheda tecnicaSpiegazioni elettronici
logo
Shindengen Electric Mfg...
M1F80 SHINDENGEN-M1F80 Datasheet
283Kb / 6P
General Purpose Rectifiers(800V 1A)
More results


Descrizione simile - M1F80M12W2-1LA

Produttore elettroniciIl numero della parteScheda tecnicaSpiegazioni elettronici
logo
STMicroelectronics
A1TB45W65M5-FC STMICROELECTRONICS-A1TB45W65M5-FC Datasheet
445Kb / 14P
ACEPACK 1 power module, boost topology 650 V, MDmesh M5 Power MOSFETs with SiC diode and NTC
A2F12M12W2-F1 STMICROELECTRONICS-A2F12M12W2-F1 Datasheet
565Kb / 15P
ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC
A2U12M12W2-F1C STMICROELECTRONICS-A2U12M12W2-F1C Datasheet
478Kb / 14P
ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET
A2U12M12W2-F2 STMICROELECTRONICS-A2U12M12W2-F2 Datasheet
482Kb / 15P
ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC
ADP280120W3 STMICROELECTRONICS-ADP280120W3 Datasheet
8Mb / 15P
Automotive-grade ACEPACK DRIVE power module, sixpack topology 1200 V, 3.8 m typ. SiC MOSFET gen.3 based
12-Oct-2022
ADP360120W3 STMICROELECTRONICS-ADP360120W3 Datasheet
8Mb / 15P
Automotive-grade ACEPACK DRIVE power module, sixpack topology 1200 V, 2.55 m typ. SiC MOSFET gen.3 based
19-Oct-2022
ADP480120W3-L STMICROELECTRONICS-ADP480120W3-L Datasheet
2Mb / 15P
Automotive-grade ACEPACK DRIVE power module, sixpack topology 1200 V, 1.9 m typ. SiC MOSFET gen.3 based
10-Aug-2022
ADP480120W3 STMICROELECTRONICS-ADP480120W3 Datasheet
8Mb / 15P
Automotive-grade ACEPACK DRIVE power module, sixpack topology 1200 V, 1.9 m typ. SiC MOSFET gen.3 based
13-Oct-2022
logo
Microchip Technology
MSC080SMA120B4 MICROCHIP-MSC080SMA120B4 Datasheet
5Mb / 15P
1200 V, 80 mΩ SiC N-Channel Power MOSFET
12/2022 Revision B
MSC360SMA120S MICROCHIP-MSC360SMA120S Datasheet
6Mb / 16P
1200 V, 360 mΩ SiC N-Channel Power MOSFET
01/2022 Revision A
More results




A proposito di STMicroelectronics


STMicroelectronics è un produttore di elettronica e semiconduttori multinazionali con sede a Ginevra, in Svizzera.

La società offre una vasta gamma di prodotti tra cui microcontrollori, sensori, amplificatori di potenza e circuiti integrati per varie applicazioni nei mercati automobilistici, industriali e di consumo.

Fondata nel 1987, STMicroelectronics ha operazioni in oltre 100 paesi ed è una delle più grandi società di semiconduttori al mondo.

*Queste informazioni sono solo a scopo informativo generale, non saremo responsabili per eventuali perdite o danni causati dalle informazioni di cui sopra.




Link URL



Lei ha avuto il aiuto da alldatasheet?  [ DONATE ] 

Di alldatasheet   |   Richest di pubblicita   |   contatti   |   Privacy Policy   |   Collegamento alla scheda tecnica    |   scambio Link   |   Ricerca produttore
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com