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GANB4R8-040CBA Scheda tecnica (PDF) - Nexperia B.V. All rights reserved
GANB4R8-040CBA Datasheet PDF - Nexperia B.V. All rights reserved
Il numero della parte GANB4R8-040CBA
Scarica  GANB4R8-040CBA Scarica
Grandezza file   1252.78 Kbytes
Page   13 Pages
Produttore elettronici  NEXPERIA [Nexperia B.V. All rights reserved]
Homepage  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved
Spiegazioni elettronici 40 V, 4.8 mOhm bi-directional Gallium Nitride (GaN) FET in a 2.1 mm x 2.1 mm Wafer Level Chip-Scale Package (WLCSP)

GANB4R8-040CBA Datasheet (PDF)

Go To PDF Page Scarica Scheda tecnica
GANB4R8-040CBA Datasheet PDF - Nexperia B.V. All rights reserved

Il numero della parte GANB4R8-040CBA
Scarica  GANB4R8-040CBA Click to download

Grandezza file   1252.78 Kbytes
Page   13 Pages
Produttore elettronici  NEXPERIA [Nexperia B.V. All rights reserved]
Homepage  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved
Spiegazioni elettronici 40 V, 4.8 mOhm bi-directional Gallium Nitride (GaN) FET in a 2.1 mm x 2.1 mm Wafer Level Chip-Scale Package (WLCSP)

GANB4R8-040CBA Scheda tecnica (HTML) - Nexperia B.V. All rights reserved


GANB4R8-040CBA Dettagli del prodotto

1. General description
The GANB4R8-040CBA is a 40 V, 4.8 mΩ bi-directional Gallium Nitride (GaN) High Electron-
Mobility-Transistor (HEMT) in a Wafer Level Chip-Scale (WLCSP) package. It is a normally-off emode
device offering superior performance.

2. Features and benefits
• Enhancement mode - normally-off power switch
• Bi-directional device
• Ultra high switching speed capability
• Ultra-low on-state resistance
• RoHS, Pb-free, REACH-compliant
• High efficiency and high power density
• Wafer Level Chip-Scale Package (WLCSP) 2.1 mm x 2.1 mm

3. Applications
• High-side load switch
• OVP protection in smart phone USB port
• Power switch circuits
• Stand-by power system




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