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TDS4B212MX Scheda tecnica (PDF) - Toshiba Semiconductor

TDS4B212MX Datasheet PDF - Toshiba Semiconductor
Il numero della parte TDS4B212MX
Scarica  TDS4B212MX Scarica
Grandezza file   597.85 Kbytes
Page   13 Pages
Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
Spiegazioni elettronici CMOS Digital Integrated Circuits Silicon Monolithic

TDS4B212MX Datasheet (PDF)

Go To PDF Page Scarica Scheda tecnica
TDS4B212MX Datasheet PDF - Toshiba Semiconductor

Il numero della parte TDS4B212MX
Scarica  TDS4B212MX Click to download

Grandezza file   597.85 Kbytes
Page   13 Pages
Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
Spiegazioni elettronici CMOS Digital Integrated Circuits Silicon Monolithic

TDS4B212MX Scheda tecnica (HTML) - Toshiba Semiconductor


TDS4B212MX Dettagli del prodotto

Functional Description
• 1-32Gbps 1-Lane Two Differential Channel, 2:1 Mux/1:2 De-Mux
General
TDS4A212MX, TDS4B212MX are high-speed differential channel multiplexer(Mux)/demultiplexer(De-Mux)
switches. These devices are designed to support up to 32Gbps high-speed differential interface such as PCIe®
5.0, CXL 2.0, USB4® Version 2.0, ThunderboltTM 4, DisplayPortTM 2.0.
TDS4A212MX and TDS4B212MX have different pinout. TDS4B212MX has an optimized pinout to achieve high
frequency performance, on the other hand TDS4A212MX's pinout is easy to use for board layout.
The A Port (An+, An-) is connected to either the B Port (Bn+, Bn-) or C Port (Cn+, Cn-), which is determined by
the combination of both the select (SEL) and output enable (OE).When the output enable (OE) is held at a highlevel,
the switches are open (high-impedance state), regardless of the state of the select, thus these devices have
lower consumption current.
All pins are equipped with protection circuits to protect from electrostatic discharge damage.
Features
(1) Operating voltage: VCC = 1.6 to 3.6 V
(2) Low current consumption For active mode (Typ.) : Iope = 60 μA, For standby mode (Max) : ISTB = 10 μA
(3) -3-dB Bandwidth (differential) BW (Typ.) : TDS4B212MX = 27.5 GHz
TDS4A212MX = 26.2 GHz
(4) Differential insertion Loss DDIL (Typ.): TDS4B212MX = -0.9 dB @ f = 10 GHz, -1.4 dB @ f = 16 GHz
TDS4A212MX = -1.1 dB @ f = 10 GHz, -1.9 dB @ f = 16 GHz
(5) Differential return Loss DDRL (Typ.) : TDS4B212MX = -20 dB @ f = 10 GHz, -16 dB @ f = 16 GHz
TDS4A212MX = -17 dB @ f = 10 GHz, -18 dB @ f = 16 GHz
(6) Differential Off Isolation DDOIRR (Typ.) : TDS4B212MX = -16 dB @ f = 10 GHz, -14 dB @ f = 16 GHz
TDS4A212MX = -17 dB @ f = 10 GHz, -11 dB @ f = 16 GHz
(7) Differential Crosstalk DDXT (Typ.) : TDS4B212MX = -44 dB @ f = 10 GHz, -36 dB @ f = 16 GHz
TDS4A212MX = -32 dB @ f = 10 GHz, -30 dB @ f = 16 GHz
(8) Package: XQFN16
Applications
• PCIe 5.0/4.0
• CXL 2.0/1.0
• USB4 Version 2.0, Gen3/Gen2
• USB 3.2 Gen 2/Gen 1
• Thunderbolt 4
• DisplayPort 2.0/1.4
• SAS 3.0




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