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M12L128324A Scheda tecnica (PDF) - Elite Semiconductor Memory Technology Inc.

M12L128324A Datasheet PDF - Elite Semiconductor Memory Technology Inc.
Il numero della parte M12L128324A
Scarica  M12L128324A Scarica
Grandezza file   786.08 Kbytes
Page   47 Pages
Produttore elettronici  ESMT [Elite Semiconductor Memory Technology Inc.]
Homepage  http://www.esmt.com.tw/index.asp
Logo ESMT - Elite Semiconductor Memory Technology Inc.
Spiegazioni elettronici 1M x 32 Bit x 4 Banks Synchronous DRAM

M12L128324A Datasheet (PDF)

Go To PDF Page Scarica Scheda tecnica
M12L128324A Datasheet PDF - Elite Semiconductor Memory Technology Inc.

Il numero della parte M12L128324A
Scarica  M12L128324A Click to download

Grandezza file   786.08 Kbytes
Page   47 Pages
Produttore elettronici  ESMT [Elite Semiconductor Memory Technology Inc.]
Homepage  http://www.esmt.com.tw/index.asp
Logo ESMT - Elite Semiconductor Memory Technology Inc.
Spiegazioni elettronici 1M x 32 Bit x 4 Banks Synchronous DRAM

M12L128324A Scheda tecnica (HTML) - Elite Semiconductor Memory Technology Inc.


M12L128324A Dettagli del prodotto

GENERAL DESCRIPTION
The M12L128324A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

FEATURES
• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
    - CAS Latency (1, 2 & 3 )
    - Burst Length ( 1, 2, 4, 8 & full page )
    - Burst Type ( Sequential & Interleave )
• All inputs are sampled at the positive going edge of the system clock
• DQM for masking
• Auto & self refresh
• 64ms refresh period (4K cycle)




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