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STBV10500BY4 Scheda tecnica (PDF) - Innogration Technologies, Inc.
STBV10500BY4 Datasheet PDF - Innogration Technologies, Inc.
Il numero della parte STBV10500BY4
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Grandezza file   1665.35 Kbytes
Page   6 Pages
Produttore elettronici  INNOGRATION [Innogration Technologies, Inc.]
Homepage  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
Spiegazioni elettronici Gallium Nitride 50V, 500W,0.6-1GHz RF Power Transistor

STBV10500BY4 Datasheet (PDF)

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STBV10500BY4 Datasheet PDF - Innogration Technologies, Inc.

Il numero della parte STBV10500BY4
Scarica  STBV10500BY4 Click to download

Grandezza file   1665.35 Kbytes
Page   6 Pages
Produttore elettronici  INNOGRATION [Innogration Technologies, Inc.]
Homepage  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
Spiegazioni elettronici Gallium Nitride 50V, 500W,0.6-1GHz RF Power Transistor

STBV10500BY4 Scheda tecnica (HTML) - Innogration Technologies, Inc.


STBV10500BY4 Dettagli del prodotto

Description
The STBV10500BY4 is a 500watt Doherty pair capable, GaN HEMT, ideal for for 4G/5G cellular
applications from 0.6 to 1GHz..
It can be configured as asymmetrical Doherty delivering 80W average power, according to normal
8dB back off.
There is no guarantee of performance when this part is used outside of stated frequencies.

Applications
 Asymmetrical Doherty amplifier within 0.6-1GHz
 UHF TV




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