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STCV10700BY4 Scheda tecnica (PDF) - Innogration Technologies, Inc.
STCV10700BY4 Datasheet PDF - Innogration Technologies, Inc.
Il numero della parte STCV10700BY4
Scarica  STCV10700BY4 Scarica
Grandezza file   1459.12 Kbytes
Page   6 Pages
Produttore elettronici  INNOGRATION [Innogration Technologies, Inc.]
Homepage  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
Spiegazioni elettronici Gallium Nitride 50V, 700W,0.6-1GHz RF Power Transistor

STCV10700BY4 Datasheet (PDF)

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STCV10700BY4 Datasheet PDF - Innogration Technologies, Inc.

Il numero della parte STCV10700BY4
Scarica  STCV10700BY4 Click to download

Grandezza file   1459.12 Kbytes
Page   6 Pages
Produttore elettronici  INNOGRATION [Innogration Technologies, Inc.]
Homepage  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
Spiegazioni elettronici Gallium Nitride 50V, 700W,0.6-1GHz RF Power Transistor

STCV10700BY4 Scheda tecnica (HTML) - Innogration Technologies, Inc.


STCV10700BY4 Dettagli del prodotto

Description
The STCV10700BY4 is a dual path 700watt capable, GaN HEMT, ideal for applications from 0.6 to 1GHz.
It can support CW, pulse or any modulated signal. It can be configured as push pull or Doherty.
There is no guarantee of performance when this part is used outside of stated frequencies.

Applications
 Asymmetrical Doherty amplifier within 0.6-1GHz
 UHF TV
 P band power amplifier




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