STCV201K0CY4V Scheda tecnica(PDF)

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STCV201K0CY4V Scheda tecnica (PDF) - Innogration Technologies, Inc.

STCV201K0CY4V Datasheet PDF - Innogration Technologies, Inc.


Il numero della parte	STCV201K0CY4V

Scarica	STCV201K0CY4V Scarica

Grandezza file	1287.1 Kbytes

Page	5 Pages

Produttore elettronici	INNOGRATION [Innogration Technologies, Inc.]

Homepage	http://www.innogration.net/index.htm

Logo

Spiegazioni elettronici

Gallium Nitride 50V, 1000W, 1.9-2.0GHz RF Power Transistor

STCV201K0CY4V Datasheet (PDF)

Scarica Scheda tecnica


Il numero della parte	STCV201K0CY4V

Scarica	STCV201K0CY4V Click to download

Grandezza file	1287.1 Kbytes

Page	5 Pages

Produttore elettronici	INNOGRATION [Innogration Technologies, Inc.]

Homepage	http://www.innogration.net/index.htm

Logo

Spiegazioni elettronici	Gallium Nitride 50V, 1000W, 1.9-2.0GHz RF Power Transistor

STCV201K0CY4V Scheda tecnica (HTML) - Innogration Technologies, Inc.

STCV201K0CY4V Datasheet HTML 1Page - Innogration Technologies, Inc.

STCV201K0CY4V Datasheet HTML 2Page - Innogration Technologies, Inc.

STCV201K0CY4V Datasheet HTML 3Page - Innogration Technologies, Inc.

STCV201K0CY4V Datasheet HTML 4Page - Innogration Technologies, Inc.

STCV201K0CY4V Datasheet HTML 5Page - Innogration Technologies, Inc.

STCV201K0CY4V Dettagli del prodotto

Description
The STCV201K0CY4V is a 1000-watt, internally matched GaN HEMT, designed for 5G cellular
applications with frequencies from 1.9-2.0GHz, enabled by wide band VBW capability to
support IBW up to 100MHz..
It can be configured as asymmetrical Doherty for 4G or 5G application, delivering 120 to 140W
average power, according to normal 9dB back off.
There is no guarantee of performance when this part is used in applications designed
Outside of these frequencies.

Applications
 Asymmetrical Doherty amplifier within N2 5G band and B2 4G band
 L band power amplifier

Codice articolo simile - STCV201K0CY4V

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Innogration Technologie...	STCV20700BY4V	1Mb / 8P	Gallium Nitride 50V, 700W,1.8-2.0GHz RF Power Transistor

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