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TLP350F Scheda tecnica (PDF) - Toshiba Semiconductor

TLP350F Datasheet PDF - Toshiba Semiconductor
Il numero della parte TLP350F
Scarica  TLP350F Scarica

Grandezza file   150.06 Kbytes
Page   2 Pages
Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
Spiegazioni elettronici GaA?밃s IRED Photo IC

TLP350F Datasheet (PDF)

Go To PDF Page Scarica Scheda tecnica
TLP350F Datasheet PDF - Toshiba Semiconductor

Il numero della parte TLP350F
Scarica  TLP350F Click to download

Grandezza file   150.06 Kbytes
Page   2 Pages
Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
Spiegazioni elettronici GaA?밃s IRED Photo IC

TLP350F Scheda tecnica (HTML) - Toshiba Semiconductor

TLP350F Datasheet HTML 1Page - Toshiba Semiconductor TLP350F Datasheet HTML 2Page - Toshiba Semiconductor

TLP350F Dettagli del prodotto

Industrial Inverter

Inverter for Air Conditioner

IGBT/Power MOSFET Gate Drive

IH(Induction Heating)



The TOSHIBA TLP350F consists of a GaAℓAs light-emitting diode and an integrated photodetector.

This unit is an 8-lead DIP package. The TLP350F is suitable for gate driving IGBTs or power MOSFETs. Absolute maximum ratings and electrical characteristics are the same as TLP350technical datasheet.



•  Peak output current: IO = ±2.5A (max)

•  Guaranteed performance over temperature: −40 to 100°C

•  Supply current:ICC= 2 mA (max)

•  Power supply voltage: VCC= 15 to 30 V

•  Threshold input current : IFLH= 5 mA (max)

•  Switching time (tpLH/tpHL) : 500 ns (max)

•  Common mode transient immunity: 15 kV/μs

•  Isolation voltage: 3750 Vrms

•  UL Recognized : UL1577,File No.E67349

•  Option(D4)

    VDE Approved : DIN EN 60747-5-2

    Maximum Operating Insulation Voltage : 1140VPK

    Highest Permissible Over Voltage   : 6000VPK

    (Note): When an EN60747-5-2 approved type is needed, Please designate “Option(D4)”




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