▪ Qualified & Screened to DLA SMD 5962-95812
▪ No latch-up, dielectrically isolated device islands
▪ Pin and functionally compatible with Renesas
HS-302RH series analog switches
▪ Analog signal range equal to the supply voltage
range
▪ Low leakage: 150nA (maximum, post-rad)
▪ Low rON: 60Ω (maximum, post-rad)
▪ Low standby supply current: ±150μA (maximum,
post-rad)
▪ TID Rad Hard Assurance (RHA) wafer-by-wafer
testing
• HDR (50rad(Si)/s to 300rad(Si)/s): 100krad(Si)
• LDR (<0.01rad(Si)/s): 50krad(Si)
▪ Single event effects
• SEE for LET = 60MeV·cm2/mg at 60° incident
angle, <150pC charge transferred to the output
of an off switch (based on SOI design
calculations)