Features
▪ Qualified to Renesas Rad Tolerant Screening and
QCI Flow (R34TB0004EU)
▪ High isolation:
• 71dB at 1GHz
• 60dB at 4GHz
▪ High linearity:
• IIP2 of 111dBm
• IIP3 of 64dBm at 1GHz
▪ Wide single 2.75V to 5.25V supply voltage range
▪ 3.3V and 1.8V compatible control logic
▪ Operating temperature: -55°C to +125°C
▪ 3x3mm 16-TQFN package
▪ Ni/Pd/Au lead finish (Tin (Sn)-free)
▪ TID Radiation Lot Acceptance Testing (RLAT)
(LDR: ≤10mrad(Si)/s): 30krad(Si)
▪ SEE Characterization
• No DSEE with VDD = 6.2V at 43MeV•cm2/mg
• SET <10ns with FRF = 10MHz at 43MeV•cm2/mg
▪ Manufactured using SOI wafer fab process