1 Features
1• Drives Both a High-Side and Low-Side N-Channel
MOSFET
• 1A peak Output Current (1.0A Sink / 1.0A Source)
• Independent TTL Compatible Inputs
• Bootstrap Supply Voltage to 108V DC
• Fast Propagation Times (30 ns Typical)
• Drives 1000 pF Load with 15ns Rise and Fall
Times
• Excellent Propagation Delay Matching (2 ns
Typical)
• Supply Rail Under-Voltage Lockout
• Low Power Consumption
• Pin Compatible with ISL6700
• Industry Standard SOIC-8 and Thermally
Enhanced WSON-8 Package

2 Applications
• Current Fed Push-Pull Converters
• Half and Full Bridge Power Converters
• Solid State Motor Drives
• Two Switch Forward Power Converters

3 Description
The LM5109A is a cost effective, high voltage gate
driver designed to drive both the high-side and the
low-side N-Channel MOSFETs in a synchronous
buck or a half bridge configuration. The floating highside
driver is capable of working with rail voltages up
to 90V. The outputs are independently controlled with
TTL compatible input thresholds. The robust level
shift technology operates at high speed while
consuming low power and providing clean level
transitions from the control input logic to the high-side
gate driver. Under-voltage lockout is provided on both
the low-side and the high-side power rails. The
device is available in the SOIC and the thermally
enhanced WSON packages.