1 Features
• 100-V Three Phase Half-Bridge Gate driver
– Drives N-Channel MOSFETs (NMOS)
– Gate Driver Supply (GVDD): 5-20 V
– MOSFET supply (SHx) support upto 100 V
• Integrated Bootstrap Diodes (DRV8300D devices)
• Supports Inverting and Non-Inverting INLx inputs
• Bootstrap gate drive architecture
– 750-mA source current
– 1.5-A sink current
• Supports up to 15S battery powered applications
• Low leakage current on SHx pins (<55 μA)
• Absolute maximum BSTx voltage upto 125-V
• Supports negative transients upto -22-V on SHx
• Built-in cross conduction prevention
• Adjustable deadtime through DT pin for QFN
package variants
• Fixed deadtime insertion of 200 nS for TSSOP
package variants
• Supports 3.3-V and 5-V logic inputs with 20 V Abs
max
• 4 nS typical propogation delay matching
• Compact QFN and TSSOP packages
• Efficient system design with Power Blocks
• Integrated protection features
– BST undervoltage lockout (BSTUV)
– GVDD undervoltage (GVDDUV)

2 Applications
• E-Bikes, E-Scooters, and E-Mobility
• Fans, Pumps, and Servo Drives
• Brushless-DC (BLDC) Motor Modules and PMSM
• Cordless Garden and Power Tools, Lawnmowers
• Cordless Vacuum Cleaners
• Drones, Robotics, and RC Toys
• Industrial and Logistics Robots

3 Description
DRV8300 is 100-V three half-bridge gate drivers,
capable of driving high-side and low-side N-channel
power MOSFETs. The DRV8300D generates the
correct gate drive voltages using an integrated
bootstrap diode and external capacitor for the highside
MOSFETs. The DRV8300N generates the correct
gate drive voltages using an external bootstrap diode
and external capacitor for the high-side MOSFETs.
GVDD is used to generate gate drive voltage for
the low-side MOSFETs. The Gate Drive architecture
supports peak up to 750-mA source and 1.5-A sink
currents.
The phase pins SHx is able to tolerate the significant
negative voltage transients; while high side gate
driver supply BSTx and GHx is able to support
to higher positive voltage transients (125-V) abs
max voltage which improves robustness of the
system. Small propagation delay and delay matching
specifications minimize the dead-time requirement
which further improves efficiency. Undervoltage
protection is provided for both low and high side
through GVDD and BST undervoltage lockout.