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LF442MH/883 Scheda tecnica (PDF) - Texas Instruments

LF442MH/883 Datasheet PDF - Texas Instruments
Il numero della parte LF442MH/883
Scarica  LF442MH/883 Scarica
Grandezza file   952.23 Kbytes
Page   18 Pages
Produttore elettronici  TI2 [Texas Instruments]
Homepage  https://www.ti.com
Logo TI2 - Texas Instruments
Spiegazioni elettronici LF442QML Dual Low Power JFET Input Operational Amplifier

LF442MH/883 Datasheet (PDF)

Go To PDF Page Scarica Scheda tecnica
LF442MH/883 Datasheet PDF - Texas Instruments

Il numero della parte LF442MH/883
Scarica  LF442MH/883 Click to download

Grandezza file   952.23 Kbytes
Page   18 Pages
Produttore elettronici  TI2 [Texas Instruments]
Homepage  https://www.ti.com
Logo TI2 - Texas Instruments
Spiegazioni elettronici LF442QML Dual Low Power JFET Input Operational Amplifier

LF442MH/883 Scheda tecnica (HTML) - Texas Instruments


LF442MH/883 Dettagli del prodotto

FEATURES
• 1/10 Supply Current of a LM1458: 400 μA (Max)
• Low Input Bias Current: 50 pA (Typ)
• Low Input Offset Voltage: 1 mV (Typ)
• Low Input Offset Voltage Drift: 7 μV/°C (Typ)
• High Gain Bandwidth: 1 MHz (Typ)
• High Slew Rate: 1 V/μs (Typ)
• Low Noise Voltage for Low Power: 35 nV/√Hz
(Typ)
• Low Input Noise Current: 0.01 pA/√Hz (Typ)
• High Input Impedance: 1012Ω

DESCRIPTION
The LF442 dual low power operational amplifier
provides many of the same AC characteristics as the
industry standard LM1458 while greatly improving the
DC characteristics of the LM1458. The amplifier has
the same bandwidth, slew rate, and gain (10 kΩ load)
as the LM1458 and only draws one tenth the supply current of the LM1458. In addition the well matched
high voltage JFET input devices of the LF442 reduce
the input bias and offset currents by a factor of
10,000 over the LM1458. A combination of careful
layout design and internal trimming ensures very low input offset voltage and voltage drift. The LF442 also
has a very low equivalent input noise voltage for a
low power amplifier.
The LF442 is pin compatible with the LM1458
allowing an immediate 10 times reduction in power
drain in many applications. The LF442 should be
used where low power dissipation and good electrical
characteristics are the major considerations.




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