1 Features
• Universal: dual low-side, dual high-side or halfbridge
driver
• Supports basic and functional isolation
• CMTI greater than 125V/ns
• Up to 4A peak source, 6A peak sink output
• Switching parameters:
– 33ns typical propagation delay
– 5ns maximum pulse-width distortion
– 10μs maximum VDD power-up delay
• Up to 25V VDD output drive supply
– 5V and 8V VDD UVLO Options
• Junction temperature range (Tj) –40°C to 150°C
• Narrow body SOIC-16 (D) package
• TTL and CMOS compatible inputs
• Safety-related certifications:
– 4242VPK isolation per DIN EN IEC 60747-17
(VDE 0884-17) (planned)
– 3000VRMS isolation for 1 minute per UL 1577
(planned)
– CQC certification per GB4943.1-2022 (planned)

2 Applications
• Server power supplies
• Solar inverter, solar power optimizer
• Telecom brick converter
• Wireless infrastructure
• Industrial transportation and robotics

3 Description
The UCC21220 and UCC21220A devices are basic
and functional isolated dual-channel gate drivers with
4A peak-source and 6A peak-sink current. They are
designed to drive power MOSFETs and GaNFETs in
PFC, Isolated DC/DC, and synchronous rectification
applications, with fast switching performance and
robust ground bounce protection through greater than
125V/ns common-mode transient immunity (CMTI).
These devices can be configured as two low-side
drivers, two high-side drivers, or half-bridge drivers.
Two outputs can be paralleled to form a single driver
which doubles the drive strength for heavy load
conditions due to the best-in-class delay matching
performance.
Protection features include the following: DIS pin
shuts down both outputs simultaneously when it is set
high, all supplies have undervoltage lockout (UVLO),
and active pulldown protection clamps the output
below 2V when unpowered or floated.
With these features, these devices enable high
efficiency, high power density, and robustness in a
wide variety of power applications.