Description
These P-Channel MOSFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET® power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in battery and
load management.
A thermally enhanced large pad leadframe has been incorporated into the
standard SOT-23 package to produce a HEXFET Power MOSFET with the
industry's smallest footprint. This package, dubbed the Micro3™, is ideal for
applications where printed circuit board space is at a premium. The low profile
(<1.1mm) of the Micro3 allows it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards. The thermal
resistance and power dissipation are the best available.