AP400N08T2 Scheda tecnica(PDF) - A POWER MICROELECTRONICS

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AP400N08T2 Scheda tecnica (PDF) - A POWER MICROELECTRONICS

AP400N08T2 Datasheet PDF - A POWER MICROELECTRONICS


Il numero della parte	AP400N08T2

Scarica	AP400N08T2 Scarica

Grandezza file	1408.09 Kbytes

Page	6 Pages

Produttore elettronici	APME [A POWER MICROELECTRONICS]

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Spiegazioni elettronici

80V N-Channel Enhancement Mode MOSFET

AP400N08T2 Datasheet (PDF)

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Scarica Scheda tecnica

AP400N08T2 Datasheet PDF - A POWER MICROELECTRONICS


Il numero della parte	AP400N08T2

Scarica	AP400N08T2 Click to download

Grandezza file	1408.09 Kbytes

Page	6 Pages

Produttore elettronici	APME [A POWER MICROELECTRONICS]

Homepage

Logo

Spiegazioni elettronici	80V N-Channel Enhancement Mode MOSFET

AP400N08T2 Scheda tecnica (HTML) - A POWER MICROELECTRONICS

AP400N08T2 Datasheet HTML 1Page - A POWER MICROELECTRONICS

AP400N08T2 Datasheet HTML 2Page - A POWER MICROELECTRONICS

AP400N08T2 Datasheet HTML 3Page - A POWER MICROELECTRONICS

AP400N08T2 Datasheet HTML 4Page - A POWER MICROELECTRONICS

AP400N08T2 Datasheet HTML 5Page - A POWER MICROELECTRONICS

AP400N08T2 Datasheet HTML 6Page - A POWER MICROELECTRONICS

AP400N08T2 Dettagli del prodotto

Features
- VDS = 80V ID =400A
- RDS(ON) < 1.8mΩ VGS=10V （Type：1.5mΩ）

Applications
- Battery protection
- Load switch
- Uninterruptible power supply
- Marking and Ordering Information
- Product ID
- Pack
- Marking
- Qty(PCS)
- AP400N08T
- TO-263-3L
- AP400N08T XXX YYYY
- 2000
- TO-262-
- AP400N08T2
- 3L
- AP400N08P2 XXX YYYY
- 1000
- Absolute Maximum Ratings (TC=25℃unless otherwise noted)
- Symbol
- Parameter
- Rating
- Units
- VDS
- Drain-Source Voltage
- 80
- V
- VGS
- Gate-Source Voltage
- ±20
- ID@TC=25℃
- Continuous Drain Current, VGS @ 10V
- 400
- A
- ID@TC=100℃
- 253
- IDM
- Pulsed Drain Current
- 1600
- EAS
- Single Pulse Avalanche Energy
- 2258
- mJ
- PD@TC=25℃
- Total Power Dissipation4
- 469
- W
- TSTG
- Storage Temperature Range
- -55 to 175
- ℃
- TJ
- Operating Junction Temperature Range
- RθJA
- Thermal Resistance Junction-Ambient
- 0.32
- ℃/W
- RθJC
- Thermal Resistance Junction-Case
- 62.5

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