SUMMARY DESCRIPTION
The M29W200B is a 2 Mbit (256Kb x8 or 128Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29W200B is fully backward compatible with the M29W200.

■ SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
■ ACCESS TIME: 55ns
■ PROGRAMMING TIME
    – 10µs per Byte/Word typical
■ 7 MEMORY BLOCKS
    – 1 Boot Block (Top or Bottom Location)
    – 2 Parameter and 4 Main Blocks
■ PROGRAM/ERASE CONTROLLER
    – Embedded Byte/Word Program algorithm
    – Embedded Multi-Block/Chip Erase algorithm
    – Status Register Polling and Toggle Bits
    – Ready/Busy Output Pin
■ ERASE SUSPEND and RESUME MODES
    – Read and Program another Block during Erase Suspend
■ UNLOCK BYPASS PROGRAM COMMAND
    – Faster Production/Batch Programming
■ TEMPORARY BLOCK UNPROTECTION MODE
■ LOW POWER CONSUMPTION
    – Standby and Automatic Standby
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ 20 YEARS DATA RETENTION
    – Defectivity below 1 ppm/year
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 0020h
    – Top Device Code M29W200BT: 0051h
    – Bottom Device Code: M29W200BB 0057h
■ ECOPACK® PACKAGES AVAILABLE