SUMMARY DESCRIPTION
The M58CR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An optional 12V VPP power supply is provided to speed up customer programming. In M58CR064C and M58CR064D the VPP pin can also be used as a control pin to provide absolute protection against program or erase. In M58CR064P and M58CR064Q this feature is disabled.

FEATURES SUMMARY
■ SUPPLY VOLTAGE
    – VDD = 1.65V to 2V for Program, Erase and Read
    – VDDQ = 1.65V to 3.3V for I/O Buffers
    – VPP = 12V for fast Program (optional)
■ SYNCHRONOUS / ASYNCHRONOUS READ
    – Synchronous Burst Read mode : 54MHz
    – Asynchronous/ Synchronous Page Read mode
    – Random Access: 85, 90, 100, 120ns
■ PROGRAMMING TIME
    – 10µs by Word typical
    – Double/Quadruple Word Program option
■ MEMORY BLOCKS
    – Dual Bank Memory Array: 16/48 Mbit
    – Parameter Blocks (Top or Bottom location)
■ DUAL OPERATIONS
    – Program Erase in one Bank while Read in other
    – No delay between Read and Write operations
■ BLOCK LOCKING
    – All blocks locked at Power up
    – Any combination of blocks can be locked
    – WP for Block Lock-Down
■ SECURITY
    – 128 bit user programmable OTP cells
    – 64 bit unique device number
    – One parameter block permanently lockable
■ COMMON FLASH INTERFACE (CFI)
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Top Device Code, M58CR064C: 88CAh
    – Bottom Device Code, M58CR064D: 88CBh
    – Top Device Code, M58CR064P: 8801h
    – Bottom Device Code, M58CR064Q: 8802h