DESCRIPTION
The M59MR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.0V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally.

■ SUPPLY VOLTAGE
    – VDD = VDDQ = 1.65V to 2.0V for Program, Erase and Read
    – VPP = 12V for fast Program (optional)
■ MULTIPLEXED ADDRESS/DATA
■ SYNCHRONOUS / ASYNCHRONOUS READ
    – Configurable Burst mode Read
    – Page mode Read (4 Words Page)
    – Random Access: 100ns
■ PROGRAMMING TIME
    – 10µs by Word typical
    – Double Word Programming Option
■ MEMORY BLOCKS
    – Dual Bank Memory Array: 8 Mbit - 24 Mbit
    – Parameter Blocks (Top or Bottom location)
■ DUAL BANK OPERATIONS
    – Read within one Bank while Program or Erase within the other
    – No delay between Read and Write operations
■ BLOCK PROTECTION/UNPROTECTION
    – All Blocks protected at Power-up
    – Any combination of Blocks can be protected
■ COMMON FLASH INTERFACE (CFI)
■ 64 bit SECURITY CODE
■ ERASE SUSPEND and RESUME MODES
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Top Device Code, M59MR032C: A4h
    – Bottom Device Code, M59MR032D: A5h