■DESCRIPTION
The STP3415 is the P-Channel logic enhancement
mode power field effect transistor is produced using
high cell density. advanced trench technology to
provide excellent RDS(ON).low gate charge and
operation with gate voltage as 1.5V
This device is suitable for use as a load switch or in
applications.
■FEATURE
 -20V/-4.0A, RDS(ON) =44mΩ(typ.)@VGS =-4.5V
 -20V/-4.0A, RDS(ON) =53mΩ(typ.)@VGS =-2.5V
 -20V/-2.0A, RDS(ON) =66mΩ(typ.)@VGS =-1.8V
 -20V/-1.0A, RDS(ON) =85mΩ(typ.)@VGS =-1.5V
 Super high density cell design for extremely low
RDS(ON)
 Exceptional on-resistance and Maximum DC
current capability
■APPLICATIONS
 Cellular/Portable
 Load Switch