Description
The PESDNC2FD5VBN protects sensitive semiconductor components from
damage or upset due to electrostatic discharge (ESD) and other voltage
induced transient events. They feature large cross-sectional area junctions for
conducting high transient currents, offer desirable electrical characteristics for
board level protection, such as fast response time, low operating voltage. It
gives designer the flexibility to protect one bi-directional line in applications
where arrays are not practical.

Feature
45W peak pulse power per line (tP = 8/20μs)
 DFN1006-2L package
 Replacement for MLV (0402)
 Bidirectional configurations
 Response time is typically < 1ns
 Low clamping voltage
 Transient protection for data lines to
IEC61000-4-2(ESD) ±25KV(air), ±25KV(contact);
IEC61000-4-4 (EFT) 40A (5/50ns)

Applications
Cellular phones
 Portable devices
 Digital cameras
 Power supplies