Features
■ RDS(on) (Typical 0.26 Ω )@VGS=10V
■ Gate Charge (Typical 80nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range (150°C)

General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.