General Description
The AO5600E/L uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.AO5600E and AO5600EL are electrically identical.

-RoHS compliant
-AO5600EL is Halogen Free

Features
   n-channel
   VDS (V) = 20V, ID = 0.6A (VGS=4.5V)
   RDS(ON)< 0.65Ω (VGS= 4.5V)
   RDS(ON)< 0.75Ω (VGS= 2.5V)
   RDS(ON)< 0.95Ω (VGS= 1.8V)

   p-channel
   VDS (V) = -20V, ID = -0.5A (VGS=-4.5V)
   RDS(ON)< 0.8Ω (VGS= -4.5V)
   RDS(ON)< 1.0Ω (VGS= -2.5V)
   RDS(ON)< 1.3Ω (VGS= -1.8V)

   ESD PROTECTED!