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RFM03U3CT Scheda tecnica (PDF) - Toshiba Semiconductor
RFM03U3CT Datasheet PDF - Toshiba Semiconductor
Il numero della parte RFM03U3CT
Scarica  RFM03U3CT Scarica
Grandezza file   175.0 Kbytes
Page   4 Pages
Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
Spiegazioni elettronici Field Effect Transistor Silicon N Channel MOS Type

RFM03U3CT Datasheet (PDF)

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RFM03U3CT Datasheet PDF - Toshiba Semiconductor

Il numero della parte RFM03U3CT
Scarica  RFM03U3CT Click to download

Grandezza file   175.0 Kbytes
Page   4 Pages
Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
Spiegazioni elettronici Field Effect Transistor Silicon N Channel MOS Type

RFM03U3CT Scheda tecnica (HTML) - Toshiba Semiconductor


RFM03U3CT Dettagli del prodotto

VHF- and UHF-band Amplifier Applications

(Note) The TOSHIBA products listed in this document are intended for high
frequency Power Amplifier of telecommunications equipment.. These
TOSHIBA products are neither intended nor warranted for any other use.
Do not use these TOSHIBA products listed in this document except for
high frequency Power Amplifier of telecommunications equipment.

• Output power: PO = 3 W (typ.)
• Gain: GP = 15 dB (typ.)
• Drain efficiency: ηD = 60% (typ.)




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